Dual-Drive Power Amplifier
RF semiconductor
A patented RF power amplifier architecture, first commercialized in the FGN1722 part, that drives the amplifier stage differently from conventional designs to achieve the highest reported power-added efficiency while preserving output power and bandwidth.
- Approximately 2x energy efficiency versus conventional power amplifiers
- Higher output power and wider bandwidth in a small silicon footprint
- Validated across CMOS, GaN, SiGe, and GaAs process nodes
- FGN1722 amplifier available as a shipping product
- Designed and manufactured in the USA with supply chain transparency
- Available as finished parts or as licensable IP
Built for
Satellite communications operators and payload builders, telecom infrastructure OEMs, defense primes building radar and electronic warfare systems, and consumer wireless device makers licensing 5G/6G RF IP