Dual-Drive Power Amplifier
RF semiconductorA patented RF power amplifier architecture, first commercialized in the FGN1722 part, that drives the amplifier stage differently from conventional designs to achieve the highest reported power-added efficiency while preserving output power and bandwidth.
- Approximately 2x energy efficiency versus conventional power amplifiers
- Higher output power and wider bandwidth in a small silicon footprint
- Validated across CMOS, GaN, SiGe, and GaAs process nodes
- FGN1722 amplifier available as a shipping product