Porous-nitride microLED technology platform
Compound semiconductor / display technology
A wide-bandgap semiconductor technology platform using advanced strain engineering, novel epitaxial architectures, and MOCVD growth processes to produce efficient GaN-based red microLEDs below 10 micrometers, enabling monolithic red-green-blue microLED integration on one wafer.
- World's first bright red microLEDs in GaN via proprietary porous-nitride technology
- Efficient red emission at pixel sizes below 10 micrometers
- Monolithic RGB integration on a single wafer
- Advanced strain engineering and novel epitaxial architectures with MOCVD growth
- Maintains performance at high current densities and ultra-small scales
Built for
Display and consumer-electronics manufacturers building microLED products for AR/VR headsets and glasses, smartwatches, automotive displays, smartphones, monitors, and TVs
